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| inchange semiconductor isc product specification isc silicon npn power transistors BU112 description collector-emitter voltage- :v cex(sus) = 550v(min.) collector current- i c = 10a applications designed for deflection circuits applications in color tv receivers fitted with 90 kinescope. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-emitter voltage 550 v v cex collector-emitter voltage v be = -5v 550 v v ebo emitter-base voltage 10 v i c collector current-continuous 10 a i b b base current-continuous 4 a p c collector power dissipation @t c =25 60 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.9 /w isc website www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/
inchange semiconductor isc product specification isc silicon npn power transistors BU112 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo collector-base breakdown voltage i e = 30ma; i c = 0 10 v v ce (sat) collector-emitter saturation voltage i c = 10a; i b = 2a 3.0 v i cex collector cutoff current v ce = 550v; v be = -5v 10 ma h fe dc current gain i c = 6a; v ce = 2v 7 f t current-gain?bandwidth product i c = 0.5a; v ce = 4v 6 mhz c ob collector output capacitance i e = 0; v cb = 10v; f= 1mhz 250 pf t f fall time i c =6a; i b1 = 1a; v be = -3v 1.0 s isc website www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/ |
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